Wafor Lab Report

1. INTRODUCTION

During the manufacturing of a semiconductor wafer there are various stages a bare silicon wafer needs to undergo before it can be transformed into a complete IC. (8, 9)

One of the key stages that take place during the process is Chemical Vapour Deposition (CVD) where thin film deposition takes place. (5)

In this method a precursor gas is made to flow into a reactive chamber at controlled pressure and temperature. The chamber contains heated substrate on which thin film deposition is required to take place. The heat energy to the chamber can be either provided by a RF power source, inductive coil or infrared source.

At a certain pressure and temperature there occurs a chemical reaction between the gases inside the chamber and

The susceptor plate can be rotating type for uniform film deposition. The substrate introduced is initially at a temperature around 573°K. A pump maintains the pressure inside the chamber at 133.22 Pascal at the beginning. Once the outlet valve is closed the reactive or precursor gas SiH4 is introduced into the chamber by opening the inlet valve at a pressure lower than the atmospheric pressure. The flow rate of the gas is controlled using a mass flow meter, normally a coriolis type mass flow meter. The flow rate is maintained at 1 sl/m.

Stewart Engineers CVD Technology www.stewartengineers.com

7. Yi Zhang, Dept of Electrical Engineering; Luyao Zhang, Dept. of Chemistry; Chongum Zhou Dept. of Chemical Engineering and material Science; University of Southern California, Los Angeles, California, USA; Review of Chemical Vapour Deposition of Graphene and Related Application.

8. Abbas Emami- Naeini and Dick de Roover Control in Semiconductor Wafer Manufacturing

9. A. Emami-Naeini, J. L. Ebert, D. de Roover, and S.Ghosal, “Model-Based Control for Semiconductorand Advanced Materials Processing: An Overview,”in Proc. American Control Conference, 2004

10. Henrik Pedersen, Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden; Simon D. Elliott, Tyndall National Institute, University College Cork, Lee Maltings, Cork, Ireland ; Studying chemical vapor deposition processes with theoretical chemistry.

11. CVD equipments www.cvdequipments.com

12. L. Woods and P. Meyers; ITN Energy Systems 1 Littleton, Colorado; Atmospheric Pressure Chemical Vapor Deposition and Jet Vapor Deposition of CdTe for High Efficiency Thin Film PV Devices Final Technical Report 26 January 2000  15 August 2002

13. System Engineering Handbook, NASA, USA,