Photoluminescence Emission Analysis Essay

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Photoluminescence emission analysis (PL) has been primarily employed to investigate the optical properties, oxygen vacancy, migration and capture of photo-induced carriers in the semiconducting Ni/Ti LDH (Fig. 6). It is known that PL emissions of semiconductors are broadly divided into two categories: the band–band PL emission belonging to the electronic transitions from the conduction band (CB) bottom to the valence band (VB) top, and the excitonic PL emissions resulting from the surface oxygen vacancies and defects of semiconductors. For band–band PL emission, the lower the PL intensity, the higher the separation rate of photo-induced electron (eCB−)-hole (hVB+) pair and higher is its photo-induced activity.8, 27, 30 In case of excitonic …show more content…

The emission at 431 nm could also be attributed to self-trapped exciton (STE), which is likely to have been generated due to a single hole capture by an electron trapped in the lattice. The STE emission is of direct or indirect nature. The direct STE emission is caused by recombination of the charge carriers, while in case of indirect STE emission, recombination occurs via oxygen vacancies. The oxygen vacancies are generated due to the incorporation of Tin+ centres adjacent to the defect sites. So, it is most likely that the STE emission at 431 nm have been formed indirectly via oxygen vacancies.40 The oxygen defects generally extends from 450 to 630 nm and are associated with different types of charged (F, F+ or F2+) oxygen vacancy states and are deep level emissions. So, the emission peaks at 471, 530, 560 and 570 nm could be due to F or F2+ and F+ color centers, where F-center represents the oxygen vacancy with two trapped electrons; F+ is an oxygen vacancy with a single trapped electron and F2+ represents the oxygen vacancy without any trapped electron. On the other hand, the emission peaks below 450 nm are associated with the shallow trap

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